<![CDATA[ IEEE Transactions on Microwave Theory and Techniques - new TOC ]]>
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TOC Alert for Publication# 22 2018June 18<![CDATA[Table of contents]]>666C1C4233<![CDATA[IEEE Transactions on Microwave Theory and Techniques publication information]]>666C2C2141<![CDATA[Guest Editorial]]>66625792579144<![CDATA[An Out-of-Band IM3 Cancellation Technique Using a Baseband Auxiliary Path in Wideband LNTA-Based Receivers]]>666258025916943<![CDATA[Highly Miniaturized 120-GHz SIMO and MIMO Radar Sensor With On-Chip Folded Dipole Antennas for Range and Angular Measurements]]>666259226035092<![CDATA[A Mixed-Mode Beamforming Radar Transmitter MMIC Utilizing Novel Ultrawideband IQ-Generation Techniques in SiGe BiCMOS]]>666260426174819<![CDATA[A Highly Reconfigurable RF-DPLL Phase Modulator for Polar Transmitters in Cellular RFICs]]>$Sigma $ –$Delta $ -noise shaping and fractional sample rate conversion to account for a broad range of frequency bands and spectral emission requirements. A two-point modulation with different sampling rates and signal scaling is applied to optimize the system for operation in narrow-band and wide-band phase modulation. DCO digital predistortion and DCO gain estimation in combination with open-loop gain auto adjustment and delay calibration are implemented to achieve sufficiently low-in-band distortion. Measurement results of the RF-DPLL system as part of a polar transmitter implemented in 28-nm CMOS are shown, fulfilling 3GPP specifications for 4G, LTE-A uplink and legacy cellular communication standards like 3G, UMTS/HSPA+ and 2G, GSM/EDGE.]]>666261826272657<![CDATA[A 28-GHz Symmetrical Doherty Power Amplifier Using Stacked-FET Cells]]>$mu text{m}$ gallium arsenide (GaAs) process to verify the concept. At 28 GHz, the 2.9 mm $times1.7$ mm integrated chip exhibits a measured gain of 14.4 dB, an output power of 28.7 dBm, with an associated 37% peak PAE and 27% PAE at 6-dB power back-off. To the best of the authors’ knowledge, the DPA achieves among the highest gain and highest power density of all reported DPAs at millimeter-wave frequencies.]]>666262826373313<![CDATA[A 6–18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling]]>$mu text{m}$ GaN HEMT process. The implemented RMDA with the compact transistor layout has been implemented in a small die size of 10.7 mm^{2} and shows output powers reaching 40.3–43.9 dBm, power added efficiencies (PAEs) of 16–27%, and small-signal gains of 15.3–23.2 dB. The RMDA with the reduced thermal coupling achieves 40.6–43.4 dBm with a peak PAE of 29% in a slightly larger die size of 13.8 mm^{2}. To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, showing very high gain and efficiency over multioctave bandwidth in a small die size.]]>666263826484298<![CDATA[Analytical Waveguide Model Precisely Predicting Loss and Delay Including Surface Roughness]]>10 mode in rectangular waveguides. The proposed approach is based on a transmission line model for waveguides and a general surface roughness model, which are both derived from physical relations, i.e., Maxwell’s equations. Thus, it is neither limited to explicit frequency bands nor to certain surface profiles. Based on the proposed approach, the specific influence on the propagation coefficient and the line impedance of a waveguide is quantified in the typical transmission frequency region and also around the cutoff frequency. Also, the roughness-dependent shift of the cutoff frequency is covered by the proposed model and explained analytically. Propagation characteristics predicted by the proposed approach absolutely coincide with full-wave simulation by CST Microwave Studio with the same input parameters. Furthermore, WR10 waveguide samples are fabricated and their surface profile is characterized using a confocal laser scanning microscope. Model predictions agree with electrical measurements up to 90 GHz for the attenuation coefficient within ≤10% and within 0.08% for the phase coefficient in the transmission region of the waveguides. In addition, the difference between normally distributed and arbitrarily distributed surface profiles is covered by the model and pointed out in this paper at rigorous measurements even at very smooth surfaces with root mean square-roughness of less than 300 nm. Finally, different techniques for utilization of this approach and possible application fields are presented.]]>666264926623218<![CDATA[An Efficient Model of Transient Electromagnetic Field Coupling to Multiconductor Transmission Lines Based on Analytical Iterative Technique in Time Domain]]>666266326731953<![CDATA[Backscattering in Twisted-Pair Nonhomogeneous Transmission Lines]]>sine qua non condition to appropriately exploit the potential of short-to-medium range access lines. In this paper, a recursive formulation of the frequency-domain response of the backscattering is used for a space–time characterization. To confirm the practical use of the finding, we evaluate the properties of a loop using wideband, high-frequency $S_{11}$ measurements of the real cables. These laboratory results confirm the effectiveness and accuracy of the proposed method.]]>666267426824358<![CDATA[A Multiscale Unconditionally Stable Time-Domain (MUST) Solver Unifying Electrodynamics and Micromagnetics]]>$mu text{m}$ -thick magnetic thin film. Time steps that are up to 5000 times larger than the Courant–Friedrichs–Lewy limit have been used in these simulations without encountering stability issues. The simulation results agree with the predictions made from the theory, the commercial software or the experiments. Moreover, the algorithm has been applied to predict the effect of high permeability thin films in platform effect reduction. An electric current sheet close to a perfect electrically conducting plane coated with a 2-$mu text{m}$ -thick magnetic thin film is simulated, which exhibits an enhanced surface resistance by three orders of magnitude higher than that without the magnetic thin film.]]>666268326963943<![CDATA[Efficient Computation of the Matrix Entries in a Hierarchical-Hexahedral Finite-Element Solution of Curl-Curl Equation]]>$O(D^{2})$ to $O(D)$ , where $D$ is the degree of freedom in the hexahedral element. The efficiency of the method is verified through some numerical examples.]]>666269727031622<![CDATA[Babinet Principle for Anisotropic Metasurface With Different Substrates Under Obliquely Incident Plane Wave]]>$A^{e}$ in the interface of different substrates. The significance of the proposed theory is that it can readily be used to transfer the solution of $A^{e}$ to that of its complementary metallic elements $A^{c}$ . First, the Babinet principle is established for $A^{e}$ and its complementary magnetic elements $A^{m}$ according to the uniqueness theorem of boundary conditions, and $A^{m}$ is replaced with the corresponding metallic elements $A^{c}$ based on the dual principle. Then, the waves associated with $A^{e}$ and $A^{c}$ are considered as plane waves since their period is smaller than the operation wavelength. Thereby, the Babinet principle is reexpressed as mathematical relations between tangential transmission matrices of $A^{e}$ and $A^{c}$ . Next, the tangential transmission matrices of $A^{c}$ are solved using the corresponding circuit model, where the effective relative permeability is introduced to describe the inductive influence of the dual substrate. Finally, th-
tangential transmission matrices of $A^{e}$ are derived, and the proposed theory is verified by two examples. The theoretical results agree well with the simulated ones at normal incidence (for various substrates) and over a large range of incidence angles (up to 75° and 60° for the two examples, respectively). The measured results support the simulation and the proposed theory.]]>666270427135559<![CDATA[Tomographic Imaging of Sparse Low-Contrast Targets in Harsh Environments Through Matrix Completion]]>initial estimation step where a preliminary reconstruction of the distribution of the contrast and the associated “confidence map” are computed by means of a Bayesian compressive sensing method; 2) a filtering step devoted to identify and discard the less reliable contrast coefficients; and 3) a final dielectric profile completion step aimed at recovering a faithful image of the whole scattering scenario by exploiting a customized MC procedure. Representative numerical results and comparisons with competitive state-of-the-art inversion techniques are reported and discussed to assess the accuracy, the robustness, and the numerical efficiency of the proposed approach.]]>666271427303448<![CDATA[Pseudo-Linear Time-Invariant Magnetless Circulators Based on Differential Spatiotemporal Modulation of Resonant Junctions]]>666273127452460<![CDATA[Compact and Reliable T/R Module Prototype for Advanced Space Active Electronically Steerable Antenna in 3-D LTCC Technology]]>666274627563018<![CDATA[Wideband Inline Coaxial to Ridge Waveguide Transition With Tuning Capability for Ridge Gap Waveguide]]>Ku, ${K}$ , and Ka-bands.]]>666275727662298<![CDATA[Compact Full Band OMT Based on Dual-Mode Double-Ridge Waveguide]]>${K}$ 1-band OMT that is essential for space and mobile applications. Furthermore, the performance of the proposed OMT design is verified through a back-to-back measurement showing an excellent agreement between the full-wave simulations and measurements. Nevertheless, the proposed design achieves a measured matching level of 19 dB for the two modes and isolation level between them beyond 30 dB over the entire band.]]>666276727743514<![CDATA[Design Methodology of N-Path Filters With Adjustable Frequency, Bandwidth, and Filter Shape]]>$Delta f=50$ MHz) is 25 dBm.]]>666277527904489<![CDATA[A Design Method of Multimode Multiband Bandpass Filters]]>$k$ between coupled multimode resonators and the external quality factor $Q_{e}$ are also obtained. Thereafter, the design procedure of coupled multiresonator multiband filters is similar to that of single-band filters. A tri-band microstrip filter with tri-mode resonators is successfully designed with the proposed method and fabricated, which validates this theory.]]>666279127991797<![CDATA[Microstrip Multifunctional Reconfigurable Wideband Filtering Power Divider with Tunable Center Frequency, Bandwidth, and Power Division]]>666280028133798<![CDATA[Coupling Matrix Compression Technique for High-Isolation Dual-Mode Dual-Band Filters]]>$N+2$ coupling matrix. The presented coupling matrices can be compressed, and this technique can be used to design dual-mode resonators for high-isolation dual-band filters. One dual-mode resonator is represented as two closely coupled resonators when using this technique. The formulae for resonant frequencies and $omega _{m}$ in dual-mode theory are also derived in this paper. A dual-mode embedded hairpin resonator is designed and analyzed using this technique, and a dual-band filter using the proposed resonators is designed and fabricated to validate the proposed technique.]]>666281428211866<![CDATA[Wideband Bandpass Filter With Extremely Wide Upper Stopband]]>666282228271933<![CDATA[Proposal and Synthesis Design of Wideband Filtering Differential Phase Shifters With a Pair of Out-of-Band Transmission Zeroes]]>$R_{mathrm {z}}$ of the loaded stub. On the one hand, the prescribed phase shift value, phase deviation, and phase shift bandwidth are deduced that basically dominated by resonant modes of SLMMR together with electrical lengths of the phase-shifting lines. On the other hand, the phase properties of transmission zeroes are systematically investigated to demonstrate that they arouse little effect on the phase shift performance, but highly improve the frequency selectivity in theoretical analysis. Based on the presented synthesis method which simultaneously considers wideband phase shift and bandpass filtering function, the circuit parameters of the entire proposed phase shifter can be synthesized with prescribed phase shift value, phase deviation, bandwidth, return loss, and transmission zero positions. Besides, the phase shift and return loss bandwidth can be determined in the design process. As design examples, two 90° wideband filtering phase shifters with different specifications are synthesized, designed, and fabricated to validate our proposed approach.]]>666282828414260<![CDATA[Inherent Self-Interference Cancellation for In-Band Full-Duplex Single-Antenna Systems]]>inherent secondary SI signals at the circulator, reflected by the antenna, to cancel the primary SI signals leaked from the Tx port to the Rx port. We modified the frequency response of the secondary SI signals using a reconfigurable impedance mismatched terminal (IMT) circuit, which consists of two varactor diodes at the antenna port. We can also adjust the frequency band and the bandwidth by controlling the varactor diodes bias voltages. The IMT adjustability makes it robust to antenna input impedance variations and fabrication errors. We analyze and fabricate a prototype of the proposed technique at 2.45 GHz. We achieved more than 40-dB cancellation over 65 MHz of bandwidth. Our technique is independent of the RF circulator and antenna type and it can be applied to any frequency band. It is also very relevant to small mobile devices because it provides a simple and low-power and low-cost adjustable analog SIC technique.]]>666284228504845<![CDATA[Design and Analysis of CMOS Low-Phase-Noise Low Quadrature Error <inline-formula> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula>-Band Subharmonically Injection-Locked Quadrature FLL]]>$V$ -band subharmonically injection-locked quadrature QVCO and quadrature FLL feature excellent performance and good robustness.]]>666285128666267<![CDATA[Codesign of High-Efficiency Power Amplifier and Ring-Resonator Filter Based on a Series of Continuous Modes and Even–Odd-Mode Analysis]]>666286728787216<![CDATA[A Compact Highly Efficient High-Power Ka-band SiGe HBT Cascode Frequency Doubler With Four-Way Input Transformer Balun]]>$mu text{m}$ SiGe BiCMOS technology. Measured results show 13-dBm output power with 22% peak PAE at 34 GHz for a −1-dBm input power. The 3-dB conversion gain bandwidth is from 25 to 40 GHz, fully covering Ka-band. Peak fundamental suppression is 74.5 dB at 33 GHz, and it is higher than 35 dB over Ka-band. No performance degradation is observed after 24-h RF stress test. To the author’s best knowledge, this paper has the highest efficiency, the highest output power/power density, the highest conversion gain without output buffers, and the higher or comparable fundamental rejection among any Si-based frequency doublers. Therefore, this doubler will be a promising solution for efficient and high-power local oscillator generation in 5G wireless phased-array communication system.]]>666287928872755<![CDATA[Phase Repeatable Synthesizers as a New Harmonic Phase Standard for Nonlinear Network Analysis]]>666288828952121<![CDATA[An Electro-Optic Pulsed NVNA Load–Pull System for Distributed <inline-formula> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula>-Field Measurements]]>$E$ -field) measurements is presented. The system uses an external EO probe to measure cross-frequency phase-coherent multiharmonic vector $E$ -fields with an 8-$mu text{m}$ spatial resolution and 20 MHz–20 GHz bandwidth. We demonstrate the performance of the distributed phase-coherent $E$ -field measurements of $E_{x}$ , $E_{y}$ , and $E_{z}$ components with three harmonics above a commercially available large periphery, packaged, laterally diffused metal-oxide-semiconductor transistor. The transistor was measured at 2.2 GHz under pulsed conditions with 10-$mu text{s}$ pulse and 10% duty cycle, while outputting 55.1 dBm of power. The measured $E$ -fields of the operating transistor are animated for the first time and reveal complex nonuniform operation at harmonic frequencies.]]>666289629033348<![CDATA[Tomographic Characterization of a Multifunctional Composite High-Impedance Surface]]>666290429132727<![CDATA[Introducing IEEE Collabratec]]>666291429142111<![CDATA[IEEE Transactions on Microwave Theory and Techniques information for authors]]>666C3C357