<![CDATA[ IEEE Transactions on Microwave Theory and Techniques - new TOC ]]>
http://ieeexplore.ieee.org
TOC Alert for Publication# 22 2019April 22<![CDATA[Table of contents]]>674C1C4238<![CDATA[IEEE Transactions on Microwave Theory and Techniques publication information]]>674C2C2143<![CDATA[An Efficient Mixed Finite-Element Time-Domain Method for Complex Electrically Small Problems]]>674128512942502<![CDATA[Dispersive Contour-Path MNL-FDTD Scheme for Fast Analysis of Waveguide Metamaterials]]>674129513072631<![CDATA[A New Concept of Partial Electric/Magnetic Walls for Application in Design of Balanced Bandpass Filters]]>674130813151924<![CDATA[A Precise Wavenumber Domain Algorithm for Near Range Microwave Imaging by Cross MIMO Array]]>$N^{4}$ lg$N$ ). It can also be implemented to boundary arrays by coherent subarray superposition. Experiments using both simulated and measured data verify its performance. The point spread function and resolution of cross MIMO topology are discussed based on the images reconstructed by this algorithm using measured data.]]>674131613263417<![CDATA[Baseband and Super-Resolution-Passband Reconstructions in Microwave Imaging]]>67413271335932<![CDATA[An Equivalent Circuit Model for Rectangular Waveguide Performance Analysis Considering Rough Flanges’ Contact]]>674133613452416<![CDATA[Modeling of Passive Intermodulation in Connectors With Coating Material and Iron Content in Base Brass]]>674134613563591<![CDATA[Circuit Modeling of 3-D Cells to Design Versatile Full-Metal Polarizers]]>$S_{11}$ ) to 11% is possible by employing the second cell.]]>674135713691664<![CDATA[Modeling Ground-Shielded Integrated Inductors Incorporating Frequency-Dependent Effects and Considering Multiple Resonances]]>674137013783114<![CDATA[Low-Loss and Wideband Acoustic Delay Lines]]>3 for the first time. Due to its high electromechanical coupling, the shear-horizontal mode is suited for producing devices with large bandwidths. Here, we show that shear-horizontal waves in LiNbO_{3} thin films are also excellent for implementing low-loss ADLs based on unidirectional transducers. The high acoustic reflections and large transducer unidirectionality induced by the mechanical loading of the electrodes on a LiNbO_{3} thin film provide a great tradeoff between delay line insertion loss and bandwidth. The directionality for two different types of unidirectional transducers has been characterized. Delay lines with variations in the key design parameters have been designed, fabricated, and measured. One of our fabricated devices has shown a group delay of 75 ns with an IL below 2 dB over a 3-dB bandwidth of 16 MHz centered at 160 MHz (fractional bandwidth = 10%). The measured insertion loss for other devices with longer delays and different numbers of transducer cells are analyzed, and the loss contributing factors and their possible mitigation are discussed.]]>674137913913279<![CDATA[Synthesized Method of Dual-Band Common-Mode Noise Absorption Circuits]]>674139214013508<![CDATA[A Tunable Reflection/Transmission Coefficient Circuit Using a 45° Hybrid Coupler With Two Orthogonal Variables]]>674140214112109<![CDATA[Design of Wideband In-Phase and Out-of-Phase Power Dividers Using Microstrip-to-Slotline Transitions and Slotline Resonators]]>674141214242125<![CDATA[Double Square Waveguide Directional Coupler for Polarimeter Calibration]]>10 and TE_{01} orthogonal modes in a square waveguide is presented. This waveguide coupler is aimed at the calibration of polarization receivers. This is composed of a pair of rectangular waveguide directional couplers, which are rotated 90° between them and both are coupled to the main square waveguide through each one of the square section walls. The coupler covers the full frequency band from 10 to 18.9 GHz. It has inherent low cross-polarization, which allows obtaining any known elliptically polarized wave at a square waveguide when a signal is applied to the couplers. The fabricated prototype of this coupler exhibits 31 dB of coupling, with flatness of ±3.8 dB and excellent cross polarization better than 50 dB over the whole band.]]>674142514312226<![CDATA[Cascading Fundamental Building Blocks With Frequency-Dependent Couplings in Microwave Filters]]>674143214401378<![CDATA[Design of Compact Dual-Band LTCC Second-Order Chebyshev Bandpass Filters Using a Direct Synthesis Approach]]>674144114512357<![CDATA[Design of Multistate Diplexers on Uniform- and Stepped-Impedance Stub-Loaded Resonators]]>674145214603241<![CDATA[Compact Combline Filter Embedded in a Bed of Nails]]>674146114713475<![CDATA[Symmetrical Quasi-Absorptive RF Bandpass Filters]]>${Q}$ ) distribution is also carried out. Furthermore, for experimental validation, 2.5-GHz microstrip BPF demonstrators consisting of an in-band linear-phase two-stage in-series-cascade circuit and a second-order prototype are manufactured and characterized.]]>674147214823193<![CDATA[Synthesis and Design of Lumped-Element Filters in GaAs Technology Based on Frequency- Dependent Coupling Matrices]]>674148314952055<![CDATA[Bandwidth Tuning of Resonator Filter Using Reduced Number of Tunable Coupling Structures]]>674149615032050<![CDATA[Dynamically Reconfigurable SIR Filter Using Rectenna and Active Booster]]>674150415153933<![CDATA[A Radio Frequency Nonreciprocal Network Based on Switched Acoustic Delay Lines]]>3)SH0 mode acoustic delay lines employing single-phase unidirectional transducers. The four-port circulator, consisting of two switch modules and one delay line module, has been modularly designed, assembled, and tested. The design process employs time-domain full circuit simulation, and the results match well with measurements. An 18.8-dB nonreciprocal contrast between IL (6.6 dB) and isolation (25.4 dB) has been achieved over a fractional bandwidth of 8.8% at a center frequency 155 MHz, using a record low switching frequency of 877.19 kHz. The circulator also shows 25.9-dB suppression for the intramodulated tone and 30 dBm for IIP3. Upon further development, such a system can potentially lead to future wideband, low-loss chip-scale nonreciprocal radio frequency systems with unprecedented programmability.]]>674151615305177<![CDATA[Single and Power-Combined Linear E-Band Power Amplifiers in 0.12-<inline-formula> <tex-math notation="LaTeX">$mu$ </tex-math></inline-formula>m SiGe With 19-dBm Average Power 1-GBaud 64-QAM Modulated Waveforms]]>$mu text{m}$ silicon-germanium (SiGe) BiCMOS and working in the range of 60–75 GHz. The single PA is based on common-emitter (CE) driver stages followed by a CE output stage. A three-stage and four-stage versions of the single-PA as well as four- and eight-way combined variants of the four-stage PA are measured and compared. The single, four-way, and eight-way combined PAs achieve saturated output powers of 16, 19.5, and 24 dBm with peak power-added efficiencies (PAEs) of 18%, 11%, and 12%, respectively. Modulated waveforms are passed through each amplifier and data rates as high as 32 Gb/s are demonstrated for all amplifiers when driven in the linear mode. Measurements of how error-vector magnitude (EVM) and PAE degrade versus output power are presented and it is demonstrated that the eight-way combined PA can deliver 17–20 dBm of average power in a 64-quadratic-amplitude modulation, 1-Gbaud waveform (6 Gb/s), with an EVM of −32 to −24 dB and a PAE of 3%–5% without predistortion. To the author’s knowledge, this is the first paper reporting detailed measurements of PA EVM and PAE versus output power at these frequencies.]]>674153115434693<![CDATA[Frequency Multiplication With Adjustable Waveform Shaping Demonstrated at 200 GHz]]>674154415556921<![CDATA[A 2.3-mW 26.3-GHz <inline-formula> <tex-math notation="LaTeX">$G_{m}$ </tex-math></inline-formula>-Boosted Differential Colpitts VCO With 20% Tuning Range in 65-nm CMOS]]>$G_{m}$ -boosting technique using interstage inductors is employed to lower the power consumption and relax VCO startup issues. Third, a dynamic forward-body self-biased technique is used to further reduce the power consumption and PN of the proposed structure. As a proof of concept, a 26.3-GHz differential Colpitts VCO is designed and fabricated in a 65-nm CMOS process. Based on the measurement results, the VCO achieves a PN of −122.1 dBc/Hz at 10-MHz offset from the center frequency, and a TR of 20%. The circuit consumes 2.3 mW from a 1-V supply and excluding the pads occupies a 0.22 mm^{2} of silicon area. Compared to the recently published CMOS VCOs within the same frequency range, the proposed VCO simultaneously achieves a wide TR, low power dissipation, and low PN, resulting in a figure of merit (FOM) and FOM incorporating the TR (FOM$_{T}$ ) of −187 and −193 dBc/Hz at 10-MHz offset from the center frequency, respectively.]]>674155615653185<![CDATA[Large-Signal Modeling and Experimental Design Automation of Self-Isolated Harmonic Oscillator for Pulling Effect Reduction]]>674156615878994<![CDATA[A 10-mW mm-Wave Phase-Locked Loop With Improved Lock Time in 28-nm FD-SOI CMOS]]>2. The PLL also features a novel double injection-locked divide-by-3 circuit and a charge-pump mismatch compensation scheme, resulting in state-of-the-art power consumption, and jitter performance in the low-noise mode. In this mode, the in-band phase noise is between −93 and −96 dBc/Hz across the tuning range, and the integrated jitter is between 176 and 212 fs. The total power consumption of the mm-wave PLL is only 10.1 mW, resulting in a best-case PLL figure-of-merit (FOM) of −245 dB. The lock time in low-noise mode is up to $12~mu text{s}$ , which is improved to $3~mu text{s}$ by switching to the fast-locking mode, at the temporary expense of a power consumption increase to 15.1 mW, an integrated jitter increase to between 245 and 433 fs, and an FOM increase to between −235 and −240 dB.]]>674158816004277<![CDATA[Efficient X-Band Transmitter With Integrated GaN Power Amplifier and Supply Modulator]]>$mu text{m}$ gallium nitride (GaN)-on-SiC RF process as the power amplifier (PA) monolithic microwave IC. The X-band 10-W two-stage PA is designed for stable operation with minimal drain capacitance, which enables fast supply modulation. The multilevel supply modulator provides eight voltage levels with 3-bit digital control [(power digital-to-analog converter (pDAC)], achieving a state-of-the-art slew rate of 5 kV/$mu text{s}$ . Characterization of the dynamic $R_{mathrm{scriptscriptstyle ON}}$ of the GaN switches allows the development of an efficiency model for the pDAC and an investigation of the effects of the pDAC internal resistance on the PA performance, resulting in a comprehensive efficiency model for the supply-modulated PA. The flexible compact transmitter consisting of the PA and pDAC ICs shows high efficiency in backoff for a variety of signals, both for radar and communications. Measured results for amplitude- and frequency-modulated radar pulses show a composite power-added efficiency (CPAE) of 44% with a peak power of 10 W at 9.57 GHz, with simultaneous spectral confinement and 52-dB improvement of the first time sidelobe. For a 20-MHz high peak-to-average ratio LTE signal, the CPAE increases from 11% to 32% compared to a fixed supply voltage transmitter, while linearity under dynamic supply operation is maintained through digital predistortion.]]>674160116144008<![CDATA[Nanowatt-Level Wakeup Receiver Front Ends Using MEMS Resonators for Impedance Transformation]]>674161516276582<![CDATA[A Flip-Chip-Assembled W-Band Receiver in 90-nm CMOS and IPD Technologies]]>674162816392612<![CDATA[A Method for Substrate Permittivity and Dielectric Loss Characterization Up to Subterahertz Frequencies]]>674164016512535<![CDATA[A Low-Loss Fully Integrated CMOS Active Probe for Gigahertz Conducted EMI Test]]>$Omega $ current probe is designed and realized by a standard 0.18-$mu text{m}$ CMOS technology to overcome a large insertion loss of 34.2 dB in the conventional passive probe. A high-precision on-chip 1-$Omega $ resistance is implemented at the input, followed by a high gain and wideband amplifier in the proposed EMI probe. The measured insertion loss is significantly reduced to $sim 18$ dB with a bandwidth up to 3 GHz. Also, the conducted emission of a microcontroller unit is tested, which demonstrates that the proposed active probe could capture very low-level high-frequency interference overlooked by the conventional passive probe.]]>674165216602654<![CDATA[IEEE Transactions on Microwave Theory and Techniques information for authors]]>674C3C3110