High performance bilayer oxide transistor for gate driver circuitry implemented on power electronic devices

The integration of electronically active oxide transistors onto silicon circuits represents an innovative approach to improving the performance of devices. In this paper, we present high performance oxide transistor for use as gate drive circuitry integrated on top of a power electronic device, providing a novel power system. Specifically, as a core device component in gate driver, oxide transistor exhibits remarkable performance such as, high mobility (23~47cm
²
/Vs) and high breakdown voltage (BV) of 60~340V despite low process temperatures (<;300°C). In addition, we demonstrate the dynamic behavior of the inverter and the latch produced by oxide transistor and thus a complete and functioning gate drive circuitry can be implemented on top of power management integrated circuit (PMIC) as depicted in the report.