100 mW G-band MMIC Power Amplifier Based on 50nm GaN HEMT Technology

This paper reports the design and performance of a GaN MMIC power amplifier operating at G-band. Electron-beam lithography has been used to produce a 50 nm T-shaped gate on the AlGaN/GaN HEMT structure with high f
T
/f
MAX
. The reported G-band power amplifier produces an output power greater than 20.5 dBm when input power is 13 dBm and a small signal gain greater than 15 dB ranging from 160 GHz to 176 GHz. Moreover, it achieves a peak output power of 0.16 W (22.1 dBm) at 175 GHz in continuous-wave mode, with an associated power density of 1 W/mm. This is the highest output power density at this frequency range from our known.