Characterization and Modeling of a 1.3 kV Vertical GaN Diode

A simplified edge termination technique for vertical GaN diodes is proposed based on different studies through Sentaurus TCAD (Synopsys) simulations. The proposed model is verified experimentally by fabricating the 1.3 kV GaN vertical diode. The switching characteristics of this vertical GaN diode are investigated by simulating a model of the diode in a Double-Pulse Test (DPT) Circuit using SaberRD. The simulation results are compared to the switching characteristics of a comparable commercially available Si diode. Comparison of reverse recovery characteristics demonstrates that the vertical GaN diode has lower turn-off loss.