Suppression of Efficiency Droop by Inserting a Thin Undoped AlGaN Layer into Each Quantum Barrier in AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

We propose a DUV LED device architecture with band-engineered quantum barriers (QBs) to "serve" as an alternative approach to suppress the electron leakage and facilitate the electron and hole injection efficiency for efficient radiative recombination.