Si-Carbide based Interleaved Bi-Directional DC-DC Converter Design for High Power Density Fast Charging Station

Wide bandgap (WBG)power device technology opens up a new horizon for efficient and optimal high-power conversion applications. Higher switching frequency and higher temperature capabilities allow to design power converters with larger volumetric power density, higher efficiency, and less weight compared to other conventional switching devices. In this paper, the advantages of using Si-Carbide (SiC)power semiconductor devices are explored in choosing the right bidirectional DC-DC converter topology for electric vehicles (EVs)charging stations and EV-to-EV energy sharing converters. This study presents efficiency and power density comparison of the DC-DC converters with various phasing configurations and operational frequencies using available Si and SiC devices. The selected devices were chosen carefully in terms of their voltage and current ratings, power loss, and package size for fair comparison. The details of the final design using the best devices, operational frequency and converter topology are presented along with the optimized passive components.