Design of SiC MOSFET high power density soft-switching inverter using integrated magnetic technique

The efficiency and power density of inverter can be significantly enhanced by employing wide band gap semiconductor devices > Soft-switched technology as well as magnetic integration technology. In this paper, first, a magnetically integrated soft-switching inverter topology based on SiC MOSFET is proposed, and the zero voltage turn-off loss of SiC MOSFET is researched emphatically. Then the influence of parasitic capacitance of SiC MOSFET on the realization of zero-voltage switch and the method of extracting equivalent parasitic capacitance are accordingly discussed in detail. The dynamic loss model of inductor magnetic integration is constructed. The SiC MOSFET zero-voltage switching condition is optimized, the voltage and current stress formulas of the device are also corrected, and more efficient circuit design parameters are obtained. Finally, the correctness and feasibility of the theoretical analysis are proved by the experimental prototype.