A double-layer embedded electromagnetic bandgap structure with two vias for SSN suppression

A double-layer embedded electromagnetic bandgap (EBG) structure with two vias is presented to suppress the simultaneous switching noise (SSN) in high-speed digital systems. In this paper, the double-layer L-bridge rings with the opposite direction is embedded to the inside of the traditional L-EBG and two vias are distributed around the center of each unit. The proposed EBG structure is simulated by HFSS software. The results show that it can achieve an ultrawide bandgap starting from 1GHz and extending to 16.5 GHz at a suppression level of −50dB and the relative stopband bandwidth is 177%. In addition, the electric field distribution diagram is given to verify the performance of the EBG structure inside and outside the stopband. The results of the electric field distribution strongly support the simulation results of the insertion loss, and demonstrate the ability of the proposed EBG structure to suppress the noise.