The adhesion study of backside dielectric film within 3D process integration

Backside dielectric was deposited on bonded wafer after TSV reveal etch and wet clean in 3D integration. Backside Si interface roughness after Si backgrinding is one of consideration for the adhesion between the first backside dielectric and Si substrate. Different backgrinding conditions were evaluated in this paper. Low temperature dielectric films (SiO
₂
and SiN) were deposited because of the bonded wafer thermal limitation. Different stacked films deposited at different temperature were evaluated through the scratch test and bump shear test.