Design and analysis of a high power controllable phase shifter based on SIW in X-band

In this paper, a high power controllable phase shifter based on substrate integrated waveguide (SIW) in X-band, is designed and simulated. The proposed phase shifter consists of two layers of SIW and two transverse slots for coupling between them. The electromagnetic coupling technique is used to achieve a wide bandwidth. The electronically phase shift controllability is achieved by switching PIN diodes on transverse slots. In the frequency range from 11 to 12.2 GHz, return loss and insertion loss are better than 14 dB and 1.8 dB, respectively. Amplitude and phase imbalance are about ±0.4 dB and ±4°, respectively. The peak power-handling capability is analyzed using the surface-field density on the phase shifter. Simulation result shows that the peak power-handling capability of the proposed phase shifter is about 1.5 kW.