Scaling effect of cylindrical surrounding double-gate MOSFET: A device beyond 22 nm technology

The scaling of the device, for the application of VLSI and ULSI technology, is necessary. For this purpose a novel model of DG MOSFET has already been designed, after that FinFET and nanowire techniques introduced. But to further improvement for the latest technologies, the CDSG MOSFET, a novel model has an advantage of the scaling. Using this CSDG MOSFET beyond 22 nm technology, the effect on the parameters like threshold voltage, switching speed, drain current and power etc. has been discussed in this research work.