Peculiarities of magnetoresistance in Si whiskers dopped Ni at cryogenic temperatures

The article deals with the influence of the magnetic impurities on magnetoresistance of silicon whiskers. The features of transition of the metal impurities (nickel) in silicon crystals are investigated. It is shown that the interaction between nickel impurities and the crystal lattice of silicon promotes the formation of magnetic conglomerates on the surface of the crystal. The polarized conglomerates (polarons) can influence the transport properties of the crystal. The temperature of the cluster formation in the range of cryogenic temperatures was also calculated. A comparative analysis of the magnetoresistance of unalloyed crystals and crystals with magnetic impurities showed that the nickel impurity has a significant effect on the magnetoresistance of the crystal. It is proved that these samples can be used as switches in microelectronics under the influence of both the magnetic field and the temperature below 150K.