Heterogeneously integrated nanowires and thin films for flexible electronics

The electrical stability of flexible a-Si:H thin-film transistors (TFT) under mechanical bending is given. The electrical stability was found to be dependent on the strain state of the applied bending during dc-gate bias of the TFT. The heterogeneous integration of hybrid thin-film/nanowire structures on polyeth ylene napthalate substrates is also described. The a-Si:H coated nanowires were found to h ave approximately half of the optical reflectivity due to light scattering of the 3-D hybrid structures compared to planar thin films.