From compact model to innovative circuit design of Ag-GeS2 conductive bridge memories

CBRAMs are a kind of RRAMs fabricated in the BEOL. They are a promising breakthrough for including permanent retention mechanisms (non-volatility) in embedded systems at low cost. Thus, they are becoming very interesting for the design community. For using this device in innovative circuits, a compact model is mandatory. In this paper, we propose a continuous physical compact model, implemented in Verilog-A and integrated in standard CMOS design. The model is calibrated to device characterization results. Statistical dispersions are taken into account to allow robust design. Comparisons between the model and measurements prove its accuracy and model robustness is validated by circuit design. Finally, the model is used to show the impact of the variability of the switching time in a Non-Volatile Flip-Flop based on CBRAM cells.