Graphene, plasmonic and silicon optical modulators

In this work we showcase two novel examples of electro-optic modulators (EOM) for ultrafast and low-power future transmitters. Unlike weak-interacting EOM design, which often require high feedback in form of high-Q cavity design we deploy novel materials and metal-based approaches. Both devices are based on novel materials, namely Graphene [1] and Indium-Tin-Oxide (ITO) [2], and feature the Silicon-on-Insulator (SOI) platform facilitating ease in monolithic integration (Fig 1).