A multi-harmonic behavioral model taking into account coupling effects of long and short-term memory

This paper presents a new macro modeling methodology for Solid-State Power Amplifiers (SSPAs) and packaged transistors used in communication systems. The model topology is based on the principle of harmonic superposition recently introduced by Agilent Technologies' X-parameters(TM), upgraded with dynamic Volterra theory. The resulting Multi-Harmonic Bilateral Model takes into account the coupling effects of both short and long-term memories present in non-linear device. In this work, the behavioral model was developed from time-domain load pull measurement results and used to simulate the amplifier's response to a 16-QAM signal with specific regards to EVM and IM3. Another part of this work was to compare the performances predicted by a compact model of a GaN Power Cell made of (15×6×400μm) transistors versus the prediction given by a behavioral MHV model for both continuous and pulsed mode operating conditions.