Russian technological equipment set for high power microwave fet's and circuits based on GaAs and GaN

Using of SemiTEq equipment for high power microwave FET's and circuits based on GaAs and GaN is shown. Main technological operations are demonstrated: heterostructures growth by MBE, ohmic contacts and gate metallization by electron-beam deposition, annealing of ohmic contacts in RTA system, etching mesa isolation and passivation layers deposition by plasma chemical methods. The basic problems and their solutions are discussed.