Electron temperature - The parameter to be extracted from backside spectral photon emission

Continuous photon emission spectra of Si MOSFET devices using InGaAs and Si CCD detectors were detected with prism-based optical path through chip backside. Full spectra are obtained with single emission images by expansion of the emission spot to a spectral tail. The spectral emission information is reproduced after passing bulk silicon by a compensation for absorption. The extractable parameter is electron temperature correlated to kinetic energy of the channel electrons and the relaxation scattering process.