E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

We have successfully demonstrated a three-step recess process to fabricate high performance E-mode planar InGaAs MOSFETs. Our devices feature a composite gate insulator with InP/Al
₂
O
₃
/HfO
₂
. An L
_g
=35 nm InGaAs MOSFET with EOT = ~ 0.8 nm exhibits V
_T
= 0.17 V, R
_ON
= 285 Ohm-μm, DIBL = 135 mV/V and S = 115 mV/dec, as well as a negligible dispersion and hysteresis behavior. Most importantly, our device displays the highest value of g
_{m_max}
> 2 mS/μm at V
_DS
= 0.5 V in any III-V MOSFETs.