Impact of quasi-ballistic phonon transport on thermal properties in nanoscale devices: A Monte Carlo approach

In this work, a Monte Carlo simulation method is applied to study the phonon transport in nanoscale Si devices, and the impact of quasi-ballistic transport on the heat conduction properties in FinFETs is investigated. It is shown that the conventional method based on Fourier law significantly overestimates the heat flux from the Fin edge to the metal contact, which may result in the underestimation of the hot spot temperature.