Indium–Gallium–Zinc–Oxide Schottky Synaptic Transistors for Silent Synapse Conversion Emulation

Silent synapses play an important role in synaptic plasticity and the nervous system development. In this letter, indium-gallium-zinc-oxide (IGZO) Schottky electric-double-layer transistors were proposed for silent synapse conversion emulation. Silent to active conversion of such neuromorphic devices was realized by applying voltage pulses on the gate electrode of the synaptic transistor. In addition, some important synaptic behaviors, such as paired-pulse facilitation and dynamic high-pass filtering, were also emulated in the IGZO-based Schottky synaptic transistor after electric pulse activation.