Simulation Study of a p-LDMOS With Double Electron Paths to Enhance Current Capability

In this letter, a p-channel lateral double-diffused MOSFET (p-LDMOS) with double electron paths used to enhance the current capability is proposed. The proposed p-LDMOS has two n-channels that are controlled by an auto-generated voltage signal (VGn). The voltage signal VGn is generated during the Ors and OFF states of the hole current that flows across an integrated resistor (Rp) implemented in the P-base region. Thus, the current capability of the p-LDMOS can be significantly enhanced by the introduced electron current. The simulation results show that the current capability of the proposed p-LDMOS can be comparable to that of the n-type triple RESURF technique without any conductivity modulation effect. The power loss of the proposed p-LDMOS is reduced by approximately 78.6% and 15.6% compared with the triple RESURF p-LDMOS and n-LDMOS, respectively,at a rated load current density of 25 μA/μm.