Process Development and Integration on Si Substrate for Ion trap-based Quantum Processors

Si substrates provide flexible platform for quantum application that can integrate photonic components, active devices, and metal electrodes. Photonics integrated surface ion trap can effectively integrate the functionality of photonics integrated circuits and ion traps on the same Si-substrate. The ion trap electrodes are fabricated on a 300mm high resistivity substrate. Both leakage current and capacitance meet the device factional requirements at the wafer scale. The loaded Q-factor of the package at 9.8K is over 20, allowing application of 300V RF at low power at a trap drive frequency of 16 MHz for barium ion.