TID and DSEE Effects in a Voltage Clamp IC Prototype for Space Applications

In power conversion and distribution systems, overvoltage conditions can cause damage or destruction of the load. Redundancy does not necessarily solve this problem. A radiation-resistant voltage clamp can limit the output voltage to the set maximum value and thus protect the load. This paper presents the radiation performance of a newly developed prototype latch-up immune voltage clamp that can clamp voltages up to 40 V. The partially ESA-certified ATMEL ATMX150RHA silicon-on-insulator technology was used to make the IC immune to latch-ups. In addition, ‘hardness-by-design’ techniques were used. To ensure reliability in the space environment, the ICs were tested for radiation tolerance. The results of total ionizing dose effects and destructive single-event effects are presented in this paper. The evaluation of the DSEE-related safe operating area in space is also given. The analysis and possible improvements in the design of this prototype IC are given. Since not all transistors in the ATMX150RHA technology have been previously tested against TID effects, the test results also provide additional information on the radiation behavior of the technology.