A 6 Watt 6 GHz GaAsFET Power Module with GaAs Matching Circuits

A GaAs matched FET (M-FET) technology has been developed which incorporates separate GaAs matching chips and GaAsFETs within a small hermetic package. By using two separately matched 6 mm FET chips in the design, we have achieved 6.3 watts of output power with 9 dB associated gain at 6 GHz.