Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 /spl mu/m quantum dot lasers

We show that even in quantum dot lasers with very low threshold current density (J/sub th/ = 40-50 A/cm/sup 2/ at 300 K) the temperature sensitivity of the threshold current arises from nonradiative recombination which comprises /spl sim/60-70% of J/sub th/ at 300 K.