Silicon based resonant cavity enhanced photodetectors for optical interconnects

This paper reviews efforts made in fabricating resonant cavity enhanced photodetectors on reflecting Si substrates. This includes Si photodetectors as well as recent advancements in Ge on Si resonant cavity enhanced photodetectors. These wafers offer the possibility of integrating a normally incident photodetector with Si receiver circuitry, reducing electrical coupling loss as well as reducing packaging and testing cost over a hybrid solution.