Highly strained GaInAs/GaAs 1.21 /spl mu/m vertical cavity surface emitting laser with single-mode output power of 3 mW

A highly strained GaInAs/GaAs VCSEL emitting at 1.21 /spl mu/m is demonstrated. The threshold current is 1.3 mA. The maximum single mode output power of 3 mW is achieved. These results indicate that a highly strained 1.2 /spl mu/m range GaInAs VCSEL can be useful for high capacity metro-area networks.