Characteristics of 1.3 /spl mu/m AlGaInAs-based multiple quantum well tunnel injection lasers

1.3 /spl mu/m AlGalnAs-based multiple quantum well tunnel injection lasers have been fabricated for the first time for high speed and uncooled operation. By introducing the tunnel barrier, we have improved a frequency bandwidth and a damping rate, while the low frequency roll-off is increased by increasing a diffusion capacitance.