Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (/spl lambda/ = 1.2-1.3 /spl mu/m) lasers

We show for the first time that the differential carrier lifetime (/spl tau//sub d/) of identical In/sub 0.4/Ga/sub 0.6/As/GaAs/sub 0.85/P/sub 0.15//GaAs single QW broad area lasers with and without the addition of nitrogen (/spl lambda/ = 1.2-1.3 /spl mu/m) significantly reduces with the incorporation of nitrogen.