A study of the effects of microwave electromagnetic radiation on dynamic random access memory operation

The effects of microwave electromagnetic (EM) radiation on dynamic random access memory (DRAM) chips are examined. A clear correlation between EM radiation and an increase in the bit error rate is shown through experimentation under different stress conditions. However, for the power level of /spl sim/100 mW at the operating frequency of 24 GHz proposed for wireless interconnection using an external antenna, the EMI on DRAM operation is negligible.