Monolithic integration of laser diode and magneto-optic waveguide

Monolithic integration of the optical isolator with a GaInAsP/InP laser diode can be achieved by employing a selective area growth technique. In order to investigate the feasibility of the monolithic integration approach, we must realize a laser diode on an active region and a magneto-optic waveguide on a passive region of an identical substrate. In this article, we report the fabrication of a Fabri-Perot laser diode and a magneto-optic waveguide on the selective-area-grown wafer.