Auger recombination in 1.3-/spl mu/m InAs/GaInAs quantum dot lasers studied using high pressure

The Auger recombination in 1.3/spl mu/m InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical model was used which includes strain, piezoelectric field and electronic structure calculated in the QDs of truncated pyramid shape. It was found that the radiative current increases with pressure, but the Auger recombination current decreases with pressure and is the dominant recombination path at room temperature in 1.3/spl mu/m QD lasers.