1.64 /spl mu/m emission from InAs quantum dots grown on a GaAs substrate using AlGaAsSb metamorphic buffers

We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state photoluminescence at wavelengths >1.6/spl mu/m is observed along with first-excited state lasing at /spl lambda//spl sim/1.34 /spl mu/m.