Self-organized iron silicide nano dots on silicon [001] substrate

This paper studies the self-organized iron silicide nano dots on silicon [001] substrate. In the experiment, self-aligned (1D) iron disilicide quantum dots have been successfully grown by a UHV electron gun evaporation system with vacuum level better that 10/sup -9/ torr, using either Si/sub x/Ge/sub 1-x/ or strained Si as a substrate. JEOL 2010 and 4000EX transmission electron microscopes, operating at 200 and 400 KeV, were used to study the microstructures.