Postgrowth wavelength tuning of InGaAsP/InP multiple quantum wells using dielectric-cap disordering

Impurity-free quantum well disordering has been used for the wavelength tuning of strained InGaAsP/InP multiple-quantum-well (MQW) structures. By implementing different kinds of dielectric caps, damage enhanced and thermally induced quantum well intermixing were carried out for the bandgap engineering of the MQW after wafer growth. Two different combinations of the dielectric capping were selected for extended-cavity laser fabrication to evaluate the effects of quantum well disordering.