Afterpulsing of single-photon avalanche photodetectors

In this work, an experiment was carried out by making use of the interleaved pulse measurement to investigate the afterpulsing effect of InGaAs/InP APD at different temperatures. The primary dark current and detrap time as functions of temperature were obtained by fitting the experimental data. This work clearly reveals the impact of afterpulsing effect on the dark count rate, and an optimum operation temperature for low dark count was observed for InGaAs/InP APD photon counters.