35-GHz modulation bandwidth in injection-locked semiconductor lasers

In this study, we experimentally demonstrate that, by using the injection locking method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is achieved in 1.3-/spl mu/m DFB lasers. In this experimental the output of the master laser is used to injection lock the slave laser, and that of the slave laser is sent to a detection system to measure optical and power spectra. Power spectra are obtained by using a photodiode and by displaying the signal on a microwave spectrum analyzer. Optical spectra are taken by using a scanning Fabry-Perot interferometer. At bias current level, the intrinsic parameters of the slave laser are experimentally determined by using the four-wave mixing method. The enhancement in the modulation bandwidth is more than two folds.