Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit at a peak wavelength of 1.3 /spl mu/m with a typical room temperature continuous-wave output power of up to 1.5 mW. This is the first report of InAs/InGaAs quantum dot VCSELs on GaAs substrates with all-semiconductor distributed Bragg reflectors, emitting at 1.3 /spl mu/m.