Theoretical analysis of EUV spectrum of Xe and Sn

Emission in the extreme ultraviolet (EUV) wavelength from Xe and Sn plasmas pumped by either laser irradiation (LPP) or discharge (DPP) has been studied toward its application to semiconductor technology. In this paper, identification of emission lines and analysis of spectral profile are presented, based on the atomic structure and rate coefficient calculation using HULLAC, and atomic process simulation using the whiam collisional radiative (CR) model.