Temperature sensitivity of 1360 nm InGaAsN quantum well lasers

This study demonstrated that the nitrogen content in the quantum well (QW) dramatically affects the temperature sensitivity of current injection efficiency and material gain parameter. The current injection efficiency of InGaAsN QW lasers with increasing N-content exhibits increasing temperature sensitivity, which could result from the reduction of the heavy hole confinement. Suppression of thermionic carrier leakage is crucial to realizing high-performance InGaAsN QW lasers with high N-content for emission wavelength beyond 1360-nm or even up to 1550-nm.