GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate

This paper presents GaAsSb-GaAsN and GaAsSb-InGaAsN type-II QW structures on GaAs substrate as laser materials that would achieve emission at 1550 nm and beyond. The envisioned GaAsSb-(In)GaAsN type-II QW edge-emitters and VCSELs with dilute-nitride "W" active regions may be expected to display significant practical advantage over InP-based structures. These device structures represent a competitive alternative approach in achieving a high-performance GaAs-based 1550-nm diode laser technology.