Comparison of the electrical properties for etched and as-deposited BLT thin films

Summary form only given, as follows. In recent years, some Bi-layered perovskite oxide such as SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) and Bi/sub 4-x/La/sub x/Ti/sub 3/O/sub 12/ (BLT) have been intensively studied for use in FRAMs because of its low leakage current, low coercive field, and fatigue-free with simple Pt electrode. The fatigue-free behavior of SBT and BLT thin film was due to the charge compensating effect of Bi/sub 2/O/sub 2/ layers resulting in the reduction of space charge and from domain wall unpinning that happens at least as rapidly as domain pinning.