Monolithic Circuits for 12 GHz Direct Broadcasting Satellite Reception

This paper describes the design, fabrication and performances of gallium arsenide monolithic circuits of each of the principal microwave functions of a 12 GHz DBS receiver. The technology includes the use of Czochralski grown semi-insulating substrates, ion implanted active layers and localised growth of lines and interdigital capacitances. The low noise amplifier presents a 3,6 dB noise figure with 7,3 dB gain in the r.f. band. A dual gate mixer is presented with 6,5 dB noise figure and 2 dB conversion gain. The stable local oscillator has 32 mW output power and a stability of +- 0,3 ppm/K.