MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs [001]

The GaAsN alloy has attracted much attention due to the scientific interest for the huge bandgap bowing as well as the technological importance for optoelectronic devices. The study of the bandgap energy for the higher N contents, however, is scarcely reported because of the extreme immiscibility. In this work, the bandgap energy and its temperature dependence of GaAsN (N=0-4.5%) alloy films have been investigated by photoreflectance (PR) spectroscopy.