GaInNAs quantum well VCSELs

Summary form only given. We have succeeded to produce high performance VCSELs emitting at 1300nm with bitrates up to 10 Gbit/s and output-powers above 1 mW with both approaches. Our long-wavelength devices comprise intracavity contacts in order to reduce absorption losses due to doped layers. We present different devices and discuss the impact of design and growth methods.