Interconnected lift-off VCSELs for microcavity device arrays

A schematic diagram of a lift-off VCSEL structure designed to emit at 980 nm is shown. All devices herein are grown by molecular beam epitaxy on [001]-oriented GaAs substrates. The VCSELs have a standard triple InGaAs/AlGaAs quantum well active region within a 1 /spl lambda/-thick microcavity. The distributed Bragg reflectors (DBRs) are composed of GaAs and Al/sub 0.9/Ga/sub 0.1/As quarter-wave layers.