High-speed modulation of 850-nm vertical-cavity surface-emitting lasers

The modulation bandwidth characteristics of oxide-confined post-type VCSELs and the effect of parasitic parameters are reported. From the measured and calculated modulation spectra, the intrinsic modulation limits of VCSEL devices are extracted and compared with the trench-type VCSEL fabricated from same wafer. The high-speed modulation bandwidth of 13.4 GHz was obtained from the 850-nm oxide-confined VCSELs.