Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (/spl lambda/>1.17 /spl mu/m) quantum well lasers

Summary form only given. MOCVD is used for the growth of high performance, highly-strained InGaAs(N)-GaAs quantum-well (QW) lasers. Diode lasers, with a highly-strained In/sub 0.35/Ga/sub 0.65/As QW and GaAs/sub 0.85/P/sub 0.15/ tensile-strained barriers, are demonstrated with very low threshold current density (J/sub th/ = 65 A/cm/sup 2/, L = 1500 /spl mu/m) and transparency current density (J/sub tr/ = 30 A/cm/sup 2/), at a wavelength of 1.17 /spl mu/m. External differential quantum efficiency (/spl eta//sub d/) as high as 56% has also been achieved for the short cavity (L = 500 /spl mu/m) devices.