Photocurrent response of Schottky diode on silicon-implanted SiO/sub 2/ substrate

We briefly report the optoelectronic characteristics of Schottky-type photodiode fabricated on the silicon-implanted borosilicate glass (SiO/sub 2/:Si/sup +/)-a novel nano-crystallite Si semi-conducting material. The dark current, photocurrent and breakdown voltage of the SiO/sub 2/:Si/sup +/ photodiode illuminated by Ar/sup +/ laser are measured. The effect of annealing time on the semi-conducting property of such material is characterized.